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datasheet PE4259 datasheets manu [PEREGRINE] pdf datenblatt - -
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PE4259&SPDT High Power UltraCMOS? DC - 3.0 GHz RF Switch
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&&SPDT High Power UltraCMOS? DC - 3.0 GHz RF Switch
文件大小 ：
&&180 K&&&&8 页
&& [ PEREGRINE SEMICONDUCTOR CORP. ]
Product SpecificationPE4259Product DescriptionThe PE4259 UltraCMOS(TM) RF Switch is designed to cover abroad range of applications from near DC through 3000 MHz.This reflective switch integrates on-board CMOS control logicwith a low voltage CMOS-compatible control interface, and canbe controlled using either single-pin or complementary controlinputs. Using a nominal +3-volt power supply voltage, a typicalinput 1 dB compression point of +33.5 dBm can be achieved.The PE4259 SPDT High Power UltraCMOS(TM) RF Switch ismanufactured in Peregrine’s patented Ultra Thin Silicon(UTSi(R)) CMOS process, offering the performance of GaAs withthe economy and integration of conventional CMOS.SPDT High Power UltraCMOS(TM)DC – 3.0 GHz RF SwitchFeaturesoSingle-pin or complementary CMOSlogic control inputsoLow insertion loss: 0.35 dB at1000 MHz, 0.5 dB at 2000 MHzoIsolation of 30 dB at 1000 MHz, 20 dBat 2000 MHzoTypical input 1 dB compression pointof +33.5 dBmoUltra-small SC-70 packageFigure 1. Functional DiagramFigure 2. Package Type SC-70RFC6-lead SC-70RF1RF2CMOSControlDriverCTRL CTRL or VDDTable 1. Electrical Specifications @ +25 °C, VDD= 3 V(ZS= ZL= 50Ohm)ParameterOperation Frequency1Insertion LossIsolationReturn Loss‘ON’ Switching Time‘OFF’ Switching TimeVideo Feedthrough2Input 1 dB CompressionInput IP31000 MHz1000 MHz, 20dBm input power31.51000 MHz2000 MHz1000 MHz2000 MHz1000 MHz2000 MHz50% CTRL to 0.1 dB of final value, 1 GHz50% CTRL to 25 dB isolation, 1 GHz29192124ConditionsMinimumDCTypical0.350.50302022271.501.501533.555Maximum30000.450.60UnitsMHzdBdBdBdBdBdBususmVppdBmdBmNotes: 1. Device linearity will begin to degrade below 10 MHz.2. The DC transient at the output of any port of the switch when the control voltage is switched from Low toHigh or High to Low in a 50Ohmtest set-up, measured with 1ns risetime pulses and 500 MHz bandwidth.Document No. 70-0134-02│(C)2005 Peregrine Semiconductor Corp. All rights reserved.Page 1 of 8
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datasheet IN4728A datasheets manu [FAIRCHILD] pdf datenblatt - -
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IN4728A&One Watt Zeners
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&&One Watt Zeners
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&&25 K&&&&2 页
&& [ FAIRCHILD SEMICONDUCTOR ]
1N4728A - 1N4752A Series1N4728A - 1N4752A Series One Watt ZenersAbsolute Maximum Ratings*P a ra m e te rS to ra g e T e m p e ra tu re R a n g eM a x im u m J u n c tio n O p e ra tin g T e m p e ra tu reL e a d T e m p e ra tu re (1 /1 6 ” fro m c a s e fo r 1 0 s e c o n d s )T o ta l D e v ic e D is s ip a tio nD e ra te a b o v e 5 0°CT h e rm a l re s is ta n c e J u n c tio n to L e a dT h e rm a l re s is ta n c e J u n c tio n to A m b ie n tS u rg e P o w e r* *TA = 25°C unless otherwise notedTolerance: A = 5%V a lu e-6 5 to + 2 0 0+ 200+ 2301 .06 .6 75 3 .510010U n its°C°C°CWm W /° C°C /W°C /WW*These ratings are limiting values above which the serviceability of the diode may be impaired.**Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.NOTES:1)These ratings are based on a maximum junction temperature of 200 degrees C.2)These are steady state limits. The factory should be consulted on applications involving pulsedor low duty cycle operations.DO-41Electrical CharacteristicsDevice1N4728A1N4729A1N4730A1N4731A1N4732A1N4733A1N4734A1N4735A1N4736A1N4737A1N4738A1N4739A1N4740A1N4741A1N4742A1N4743A1N4744A1N4745A1N4746A1N4747A1N4748A1N4749A1N4750A1N4751A1N4752ATA = 25°C unless otherwise notedVZ(V)3.33.63.94.34.75.15.66.26.87.58.29.110111213151618202224273033ZZ(Ohm)10109.09.08.07.05.02.03.54.04.55.07.08.09.010141620222325354045@IZT(mA)766964585349454137343128252321191715.51412.511.510.59.58.57.5ZZK(Ohm)4004004004005005506007007007007007007007007007007007007507507507507501,0001,000@IZK(mA)1.01.01.01.01.01.01.01.01.00.50.50.50.250.250.250.250.250.250.250.250.250.250.250.250.25VR(V)1.01.01.01.01.01.02.03.04.05.06.07.07.68.49.19.911.412.213.715.216.718.220.622.825.1@IR(uA)10010050101010101010101010105.05.05.05.05.05.05.05.05.05.05.05.0ISURGE(mA)1,3801,2601,1901,070970890810730660605550500454414380344304285250225205190170150135IZM(mA)27625223421719317816214613312111010091837669615750454138343027VFFoward Voltage = 1.2 V Maximum @ IF= 200 mA for all 1N4700 series(C)1997Fairchild Semiconductor Corporation1N4700A Rev. B
Copyright(C) 2001 - 2014
ICPDF All RightsAD5601 电子技术资料PDF资料下载 第1页, 2.7 V至5.5 V ， \u003c 100 UA ， 8位/ 10位/ 12位属于nanoDAC D / A ， SPI接口，采用SC70封装
电子数据表 IC PDF
datasheet AD5601 datasheets manu [AD] - -
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电子元器件数据表 IC PDF查询
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AD5601&2.7 V至5.5 V ， \u003c 100 UA ， 8位/ 10位/ 12位属于nanoDAC D / A ， SPI接口，采用SC70封装 (2.7 V to 5.5 V, <100 UA, 8-/10-/12-Bit nanoDAC D/A, SPI Interface, SC70 Package)
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2.7 V至5.5 V ， \u003c 100 UA ， 8位/ 10位/ 12位属于nanoDAC D / A ， SPI接口，采用SC70封装2.7 V to 5.5 V, <100 UA, 8-/10-/12-Bit nanoDAC D/A, SPI Interface, SC70 Package
文件大小 ：
&&704 K&&&&
&& [ ANALOG DEVICES ]
AD5601&2.7 V至5.5 V ， \u003c 100 UA ， 8位/ 10位/ 12位属于nanoDAC D / A ， SPI接口，采用SC70封装 (2.7 V to 5.5 V, <100 UA, 8-/10-/12-Bit nanoDAC D/A, SPI Interface, SC70 Package)
2.7 V至5.5 V ， &100 μA ， 8位/ 10位/ 12位nanoDAC(R)D / A ， SPI(R)接口方面， SC70封装初步的技术数据特点6引脚SC70封装掉电&100 nA的3 V微操作：最大100 μA @ 5 V2.7 V至5.5 V电源供电通过设计保证单调上电复位至0 V与掉电检测3种省电功能与施密特触发输入，低功耗串行接口片内输出缓冲放大器，轨到轨工作SYNC中断风貌最小化零代码错误AD5601缓冲8位DAC，采用SC70 ：B版： ± 0.5 LSB INLAD5611缓冲10位DAC，采用SC70 ：B版： ± 0.5 LSB INLA版： ± 4 LSB INL缓冲AD5621 12位DAC，采用SC70 ：B版： ± 1 LSB INLA版： ± 6 LSB INLAD5601/AD5611/AD5621功能框图VDDGNDPOWER- ONRESETAD5601/AD5611/AD5621DAC注册REF （ + ）14-BITDAC产量卜FF器VOUT输入控制逻辑掉电控制逻辑电阻器网SYNCSCLKDIN图1 。表1.相关设备产品型号AD5641描述2.7 V至5.5 V ， &100 μA ， 14位，属于nanoDACD / A ，微小的SC70封装应用电压电平设置便携式电池供电仪器数字增益与失调调节可编程电压及电流源可编程衰减器概述在AD5601 / AD5611 / AD5621 ，成员属于nanoDAC家庭，单身， 8位/ 10位/ 12位，缓冲电压输出DAC，能够采用2.7 V至5.5 V电源供电，消耗&100 μA在5 V的部分都采用SC70封装。其上的片精密输出放大器允许轨到轨输出摆幅为实现的。在AD5601 / AD5611 / AD5621采用多功能3线串行接口，工作时钟速率高达30 MHz的并与SPI(R) ， QSPI (TM) ， MICROWIRE (TM)和DSP兼容接口标准。为AD5601 / AD5611 / AD5621所述的参考值来源于电源输入端，因此，给出了最广泛的动态输出范围。上述器件均内置一个上电复位电路，它确保DAC输出上电至0 V并保持，直到对该器件执行一次有效的写操作为止。在AD5601 / AD5611 / AD5621包含省电特性将电流消耗降低到&100 nA的在3 V和提供软件可选的输出负载，而在掉电模式。零件放入掉电模式通过串行界面。在正常的这些部分的低功耗操作使得它们非常适合于便携式电池供电设备。小封装，低相结合动力使得这些属于nanoDAC器件理想用于电平设置要求，如产生偏置或控制电压在空间受限和功率敏感型应用。（下转第3页）REV 。中国信息ADI公司提供的被认为是准确和可靠。但是，没有责任承担由Analog Devices供其使用，也不对任何侵犯第三方专利或其他权利，可能导致其使用的。规格如有变更，恕不另行通知。没有获发牌照以暗示或者以其他方式在ADI公司的任何专利或专利权。商标注册商标均为其各自所有者的财产。一个技术的方式， P.O. 9106箱，诺伍德，MA
， U.S.A.联系电话： 781.329.4700传真： 781.326.8703(C)2004 ADI公司保留所有权利。
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