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器件名称: IRF1404
功能描述: Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A
文件大小: 107.46KB&&&&共8页
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简　　介:PD -91896E
HEXFET Power MOSFET
l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 40V
RDS(on) = 0.004 ID = 162A
Description
Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
162 115 650 200 1.3 ± 20 519 95 20 5.0 -55 to + 175 -55 to + 175 300……
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Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright (C)2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备号-2IRF1404PBF
IRF1404PBF
结构：点接触型
品牌/型号：IR美国国际整流器/IRF1404PBF
IRF1404PBF特点：类别：分离式半导体产品家庭：MOSFET，GaNFET - 单系列：HEXFET(R)FET 型：MOSFET N 通道，金属氧化物FET 特点：标准型开态Rds（最大）@ Id, Vgs @ 25° C：4 毫欧 @ 121A, 10V漏极至源极电压(Vdss)：40V电流 - 连续漏极(Id) @ 25° C：202AId 时的 Vgs(th)（最大）：4V @ 250uA闸电荷(Qg) @ Vgs：196nC @ 10V在 Vds 时的输入电容(Ciss) ：5669pF @ 25V功率 - 最大：333W安装类型：通孔封装/外壳：TO-220-3 (直引线)包装：管件供应商设备封装：TO-220AB
免责声明：该产品“IRF1404PBF”由深圳市天雷星科技有限责任公司所提供。该公司介绍、产品等相关信息均由深圳市天雷星科技有限责任公司自行负责，商品内容真实性、准确性、合法性由深圳市天雷星科技有限责任公司完全承担，中国黄页对此不承担任何保证责任。
价格：￥8.00 元
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价格：面议
价格：￥17.00 元
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价格：￥14.50 元
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中国黄页版权所有 琼ICP备号型号：IRF1404
封装：TO-220
数量：663221
PDF电子文档：
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要查看会员价请或
备注：Original in stock 原装现货
&IRF1404 Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A⑥)
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175&C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Seventh Generation HEXFET&
&Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low &on-resistance per
silicon area. &This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. &The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.
【買家必讀】：電子元器件是專業型的產品，技術含量較高，本身可能存在多種品牌，後輟與封裝，可能導致參數與性能的差異，如有不慎，很有可能導致元器件購買錯誤，為了更好的解決您的問題，所以請您務必在下单前，將產品的封裝、後綴告訴我們。以便我們能準確迅速的为您查询。。
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