发布: | 作者:－－ | 来源: －－ | 查看:145次 | 用户关注：
【用　途】&&&& 场效应功率管
【性能 参数】
N沟 60V 83A 170W 0.012Ω　带阻尼
【互换 兼容】
【用　途】&&&& 场效应功率管
【性能 参数】
N沟 60V 83A 170W 0.012Ω　带阻尼
【互换 兼容】
本页面信息由华强电子网用户提供，如果涉嫌侵权，请与我们客服联系，我们核实后将及时处理。
解决企业成本痛点北京日电 /美通社/ -- 目前国内您好，欢迎回来
您好，欢迎来到中国供应商！
IRF1010E 逆变器MOS大功率场效应管 大量优势现货
IRF1010E 逆变器MOS大功率场效应管 大量优势现货
大量现货价格优惠质量保证量大价可谈
营业执照已上传
邮箱已验证
发货地广东 深圳
发货期限2天内发货
供货总量12145PCS
营业执照已上传
邮箱已验证
公司地址|广东 深圳 福田区 深圳市福田区新亚洲二期N2A076
供应产品分类
本页信息为深圳市源信达电子商行为您提供的“”产品信息，如您想了解更多关于“IRF1010E 逆变器MOS大功率场效应管 大量优势现货”价格、型号、厂家，请联系厂家，或给厂家留言。
类型：放大器用途：音响品牌：IR型号：IRF1010E封装：TO-220功率：IRF1010E批号：14+
IRF1010E 逆变器MOS大功率场效应管 大量优势现货
产品规格：型号：IRF1010E品牌：IR封装：TO-220制造商:International&Rectifier产品种类:MOSFETId-连续漏极电流:84&AVds-漏源极击穿电压:60&VRds&On-漏源导通电阻:12&mOhms晶体管极性:N-ChannelVgs-栅源极击穿电压&:20&V工作温度:+&175&CPd-功率耗散:200&W安装风格:Through&Hole封装&/&箱体:TO-220-3商标:International&Rectifier通道模式:Enhancement配置:Single下降时间:53&ns***小工作温度:-&55&C上升时间:78&ns典型关闭延迟时间:48&ns主营产品：各种原装进口元器件,包括集成电路,二三极&管,电源IC，IGBT模块,传感器,电阻电容,晶振,光电耦合,SMD,DIP系类…产品广泛应用于消费&类电子、电脑及周边、网络通讯、电力安防、电源管理、医疗设备及军工产品、通讯仪器、医疗仪器、&音频设备、&视频显示仪器仪表、&通讯系统&、车载电源、&马达控制、&软启动器、&伺服电机&、&变频电源&、微波通信等等。【优势品牌】：IR(国际整流器),TI(德州仪器),ADI(亚德诺),NXP(恩智浦),ALTERA(阿尔特拉),XILINX(赛灵思),ATMEL(爱特梅尔),FAIRCHILD&(仙童),TOSHIBA(东芝),ST(意法半导体),Cypress(赛普拉斯),Infineon(英飞凌)，SAMSUNG(三星)....&等&&&联系电话：深圳市源信达电子商行联系人：陈小姐QQ:移动电话：座机：Email:官网：地址：深圳市福田区中航路新亚洲电子商城二期N2A076柜一站式配单服务:&优势供应电子元器件全线产品&BOM表配套服务&打造一站式一流齐全的服务方针由于型号价格变动，一切价钱以询价为准！客户须知：由于电子元件的种类众多，无法一一上传到店铺，如在本店搜索不到您所需的型号，可通过页面旺旺，或者添加QQ&也可致电：0755-/手机：与我们联系！谢谢！&关于价格：网上报价仅供参考，根据购买数量的不同会有不同的价格浮动，以实时销售报价为准！----------------------------------------------------------------------------&关于批次：本店所有商品均为实物拍摄，由于库存不断更新，商品批次，产地有所不同属于正常现象，不在退换范围，望周知！----------------------------------------------------------------------------&关于快递：本店默认申通，如需其他快递，请联系客服说明，我们不对快递速度做任何承诺，可以帮你参考，如果快递由于不可预测因素发生延误，请不要将责任推给我们，但我们会义无反顾帮助你催促快递，希望早日送达！----------------------------------------------------------------------------&关于支付：拍下宝贝请于小时内支付，如有特殊情况请主动联系我们保留货！----------------------------------------------------------------------------&关于售后：&&&&&&&&1：客户在收到货后，须在个工作日内完成抽样试用；&&&&&&&&2：若有质量问题，请在天内出示客户检测反馈报告，经源信达技术部确定实存在质量问题，可退，可换；&&&&&&&&3：所有涉及退换货的产品，请您务必保留完整原包装；&&&&&&&&请您注意在下列情况我们是不能为您退货的；&&&&&&&&1：任何非由源信达出售的商品；&&&&&&&&2：未经检测上电路板而引起的质量纠纷；&&&&&&&&3：任何以上机的商品；&&&&&&&&4：任何因非正常使用及保管导致出现质量问题的商品；&&&&&&&&5：若天内客户对产品质量无任何异议，则默认产品质量完全符合要求。&&&&&&&&源信达祝您在商城购物愉快！----------------------------------------------------------------------------&关于发货：本店一般当天下午点前的单子当天发出，***晚小时发货，点之后的付款于次日发货。如果节假日快递休息等特殊情况可能会延迟，以本店公告为准。望谅解！----------------------------------------------------------------------------&关于评论：亲，如果你对宝贝还满意，请给我们分好评，评分对我们小店很重要，所以恳请你帮忙打分，如果我们没有做到您满意，也请不要急于给出中差评，请及时与我们沟通，请相信我们能为您解决一切问题！
供应商信息
本公司是一家专业销售配套各类品牌的三极管，场效应管，整流器，达林顿，肖特基等......拥有专业技术人员，先进的各类晶体管测试设备。
★经营理念：坚持〝信誉、品质、交货及时、薄利多销、服务至上〞的原则，为客户提供全方位
优质服务。
★服务对象：电子企业、军工、通讯、仪器仪表、工业控制、 高等院校电子部门、电子科研所及电子爱好者.
★我们的追求：赢在品质、赢在专业、赢在创新、赢在速度
真诚为广大客户提供可靠，周到，满意快捷的服务，期待与您携手合作，共创美好明天。
源信达欢迎来电洽谈！
主营产品或服务
公司所在地
广东 深圳 福田区 深圳市福田区新亚洲二期N2A076
地 址|广东 深圳 福田区 深圳市福田区新亚洲二期N2A076
公司主页|/
广东 深圳 福田区 深圳市福田区新亚洲二期N2A076
深圳市源信达电子商行
上海跨国采购会展中心
深圳会展中心
上海新国际博览中心
深圳会展中心
上海世博展览馆
深圳会展中心
上海新国际博览中心
深圳会展中心
上海新国际博览中心
大连星海会展中心
深圳会展中心
上海新国际博览中心
免责声明：
本商铺内所展现的IRF1010E 逆变器MOS大功率场效应管 大量优势现货信息及其他相关信息均由商铺所属企业自行提供，信息的真实性、准确性和合法性由商铺所属企业完全负责。中国供应商对此不承担任何保证责任。
友情提醒：
建议您在购买相关产品前务必确认供应商资质及产品质量，过低的价格有可能是虚假信息，请谨慎对待，谨防欺诈行为。
地址：广东 深圳 福田区 深圳市福田区新亚洲二期N2A076
技术支持：当前位置： >>
IR功率MOS管选型
HEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Par
t Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeySurface Mount PackagesN-ChannelIRLML2402* IRLMLMicro3Logic Level0.25 0.25 1.2 1.2 0.95 0.93 230 230 0.54 0.54
H1P-ChannelIRLML6302* IRLMLLogic Level0.6 0.6 -0.62 -0.61 -4.8 -4.8 230 230 0.54 0.54
H1* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeySurface Mount PackagesN-ChannelIRLMS1902 IRLMSMicro6Logic Level0.10 0.10 3.2 3.2 2.6 2.6 75 75 1.7 1.7
H2P-ChannelIRLMS6702* IRLMSLogic Level0.20 0.20 -2.3 -2.3 -1.9 -1.9 75 75 1.7 1.7
H2* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Voltage Resistance Resistance 1 Dissipation 1 25°C (A) (V) (°C/W) (W) (? ) (A) NumberFax Case on Demand Outline Number KeySurface Mount PackagesN-ChannelIRF7601* IRFMicro8Logic Level0.035 0.035 5.7 5.6 4.6 4.5 70 70 1.8 1.8
H3Dual N-ChannelIRF7501* IRFLogic Level0.135 0.135 2.4 2.4 1.9 1.9 100 100 1.2 1.25
H3P-ChannelIRF7604* IRFLogic Level0.09 0.09 -3.6 -3.6 -2.9 -2.9 70 70 1.8 1.8
H3Dual P-ChannelIRF7504* IRFLogic Level0.27 0.27 -1.7 -1.7 -1.4 -1.4 100 100 1.25 1.25
H3Dual N- and P-Channel Logic LevelIRF7507* IRF 30 -30 0.135 0.27 0.135 0.27 2.4 -1.7 2.4 -1.7 1.9 -1.4 1.9 -1.4 100 1.25 .25 91269 H3* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeySurface Mount PackagesN-ChannelIRF7413 IRF7413A IRF 30 0.011 0. 13 12 7 9.2 8.4 5.8 50 50 50 2.5 2.5 2.5
91562SO-8H4Dual N-ChannelIRF7311 IRF7313 IRF7333 IRF 30 30 30 0.029 0.029 0.10 0.050 0.10 6.6 6.5 3.5 4.9 3.5 5.3 5.2 2.8 3.9 2.8 62.5 62.5 62.5 62.5 62.5 2.0 2.0 2.0 2.0 2.0
91559 H4Dual P-ChannelIRF7314 IRF7316 IRF -30 0.058 0.058 0.25 -5.3 -4.9 -2.3 -4.3 -3.9 -1.8 62.5 62.5 62.5 2.0 2.0 2.0
91560 H4* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Voltage Resistance Resistance 1 Dissipation 1 25°C (A) (V) (°C/W) (W) (? ) (A) NumberFax Case on Demand Outline Number KeySurface Mount PackagesDual N- and P-ChannelIRF7317 IRF9952 IRF 30 -30 30 -30 0.029 0.058 0.10 0.25 0.029 0.058 6.6 -5.3 3.5 -2.3 6.5 -4.9 5.3 -4.3 2.8 -1.8 5.2 -3.9 62.5 62.5 62.5 62.5 62.5 62.5 2.0 2.0 2.0 2.0 2.0 2.0
SO-8H4* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeySurface Mount PackagesN-ChannelIRF7401 IRF7201 IRF 30SO-8Logic Level0.022 0.030 0.022 8.7 7.0 8.5 7.0 5.6 5.4 50 50 50 2.5 2.5 2.5
91245 H4Dual N-ChannelIRF7101 IRF7301 IRF7303 IRF 30 50Logic Level0.10 0.050 0.050 0.130 3.5 5.2 4.9 3.0 2.3 4.1 3.9 2.3 62.5 62.5 62.5 62.5 2.0 2.0 2.0 2.0
H4P-ChannelIRF7204 IRF7404 IRF7205 IRF7406 IRF -30 -30 -30Logic Level0.060 0.040 0.070 0.045 0.02 -5.3 -6.7 -4.6 -5.8 -10 -4.2 -5.4 -3.7 -3.7 -7.1 50 50 50 50 50 2.5 2.5 2.5 2.5 2.5
91356 H4* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeySurface Mount PackagesDual P-ChannelIRF7104 IRF7304 IRF -30SO-8Logic Level0.250 0.090 0.10 -2.3 -4.3 -3.6 -1.8 -3.4 -2.9 62.5 62.5 62.5 2.0 2.0 2.0
91241 H4Dual N- and P-Channe Logic LevelIRF7307 IRF7105 IRF 25 -25 30 -30 0.050 0.090 0.109 0.25 0.050 0.10 4.3 -3.6 3.5 -2.3 4.9 -3.6 3.4 -2.9 2.8 -1.8 3.9 -2.9 62.5 62 62.5 2.0 2 2.0
90 1.4 91242 H4* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeySurface Mount PackagesN-ChannelIRFL4105 IRFL110 IRFL4310 IRFL210 IRFL214 55 100 100 200 250 0.045 0.54 0.20 1.5 2.0 3.7 1.5 1.6 0.96 0.79 3.0 0.96 1.3 0.6 0.5 60 60 60 60 60 2.1 2.0 2.1 2.0 2.0
90862SOT-223H6P-ChannelIRFL.2 -1.1 -0.69 60 2.0 90864 H6N-ChannelIRLL3303 IRLL014N IRLL 55Logic Level0.031 0.14 0.04 4.6 2.0 3.8 3.7 1.6 3.0 60 60 60 2.1 2.1 2.1
91380 H6* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeySurface Mount PackagesN-ChannelIRFR3303 IRFR024N IRFR4105 IRFR1205 IRFR110 IRFR120N IRFR3910 IRFR210 IRFR220 IRFR214 IRFR224 IRFR310 IRFR320 IRFR420 IRFRC20 30 55 55 55 100 100 100 200 200 250 250 400 400 500 600 0.031 0.075 0.045 0.027 0.54 0.21 0.11 1.5 0.8 2 1.1 3.6 1.8 3 4.4 33 16 25 37 4.3 9.1 15 2.6 4.8 2.2 3.8 1.7 3.1 2.4 2 21 10 16 23 2.7 5.8 9.5 1.7 3 1.4 2.4 1.1 2 1.5 1.3 2.2 3.3 2.7 1.8 5 3.2 2.4 5 3 5 3 5 3 3 3 57 38 48 69 25 39 52 25 42 25 42 25 42 42 42
90637D-PakH7* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeySurface Mount PackagesP-ChannelIRFR5505 IRFR5305 IRFR9014 IRFR9024 IRFR9110 IRFR9120 IRFR9120N IRFR9210 IRFR9220 IRFR9214 IRFR -60 -60 -100 -100 -100 -200 -200 -250 -400 0.11 0.065 0.5 0.28 1.2 0.6 0.48 3 1.5 3.0 7.0 -18 -28 -5.1 -8.8 -3.1 -5.6 -6.5 -1.9 -3.6 -2.7 -1.8 -11 -18 -3.2 -5.6 -2 -3.6 -4.1 -1.2 -2.3 -1.7 -1.1 2.2 1.4 5 3 5 3 3.2 5 3 2.5 2.5 57 89 25 42 25 42 39 25 42 50 50
91663D-PakH7* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeySurface Mount PackagesN-ChannelIRLR2703 IRLR3303 IRLR3103 IRLR024N IRLR2705 IRLR2905 IRLR120N IRLR 30 55 55 55 100 100D-PakLogic Level0.045 0.031 0.019 0.065 0.04 0.027 0.185 0.10 22 33 46 17 24 36 11 15 14 21 29 11 15 23 6.9 9.5 3.3 2.2 1.8 3.3 2.7 1.8 3.2 2.4 38 57 69 38 46 69 39 52
H7* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Voltage Resistance Resistance 1 Dissipation 1 25°C (A) (V) (°C/W) (W) (? ) (A) NumberFax Case on Demand Outline Number KeySurface Mount PackagesN-ChannelIRFZ24NS IRFZ34NS IRFZ44NS IRFZ46NS IRFZ48NS IRF1010NS IRF3205S IRFZ44ES IRF1010ES IRF2807S IRF520NS IRF530NS IRF540NS IRF1310NS IRF3710S IRF3315S IRF3415S IRFBC20S IRFBC30S IRFBC40S 55 55 55 55 55 55 55 60 60 75 100 100 100 100 100 150 150 600 600 600 0.07 0.04 0.022 0.020 0.016 0.011 0.008 0.023 0.012 0.013 0.2 0.11 0.052 0.036 0.028 0.082 0.042 4.4 2.2 1.2 17 29 49 53 64 84 110 48 83 71 9.5 15 27 36 46 21 37 2.2 3.6 6.2 12 20 35 37 45 60 80 34 59 50 6.7 11 19 25 33 15 26 1.4 2.3 3.9 3.3 2.2 1.4 1.3 1.1 40 0.75 1.4 0.90 1.0 3.2 2.4 1.6 1.3 1.0 1.6 1.0 2.5 1.7 1.0 45 68 110 120 140 3.8 200 110 170 150 47 63 110 120 150 94 150 50 74 130
4 D2PakH10* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Voltage Resistance Resistance 1 Dissipation 1 25°C (A) (V) (°C/W) (W) (? ) (A) NumberFax Case on Demand Outline Number KeySurface Mount PackagesIRFBF20S 900 8.0 1.7 1.1 2.3 54 91665D2PakH10P-ChannelIRF5305S IRF4905S IRF9520NS IRF9530NS IRF9540NS IRF5210S -55 -55 -100 -100 -100 -100 0.06 0.02 0.48 0.20 0.117 0.06 -31 -74 -6.7 -14 -19 -35 -22 -52 -4.8 -9.9 -13 -25 1.4 40 3.2 2.0 1.6 1.0 110 3.8 47 75 94 150
H10* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Voltage Resistance Resistance 1 Dissipation 1 25°C (A) (V) (°C/W) (W) (? ) (A) NumberFax Case on Demand Outline Number KeySurface Mount PackagesN-ChannelIRL3302S IRL3202S IRL3102S IRL3402S IRL3502S IRL2703S IRL3303S IRL3103S IRL2203NS IRL3803S IRLZ24NS IRLZ34NS IRLZ44NS IRL3705NS IRL2505S IRLZ44S IRL530NS IRL 20 20 20 30 30 30 30 30 55 55 55 55 55 60 100 100D2PakLogic Level0.020 0.016 0.013 0.01 0.007 0.04 0.026 0.014 0.007 0.006 0.06 0.035 0.022 0.01 0.008 0.028 0.1 0.026 39 48 61 85 110 24 38 64 116 140 18 30 47 89 104 50 15 48 25 30 39 54 67 17 27 45 82 98 13 21 33 63 74 36 11 34 2.2 1.8 1.4 1.1 0.89 3.3 2.2 1.4 0.90 0.75 3.3 2.2 1.4 0.90 0.75 1.0 2.4 1.0 57 69 89 110 140 45 68 110 170 200 45 68 110 170 200 150 63 150
H10* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeySurface Mount PackagesN-ChannelFA38SA50LC FA57SA50LC 500 500SOT-227Fully Isolated Low Charge0.13 0.08 38 57 24 36 0.25 0.20 500 625
H21* Indicates low VGS(th), which can operate at VGS = 2.7V 1 Measured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case. SOT-223 Micro3 SO-8 SOT-227Micro6 Illustrations not to scaleMicro8D-PakD 2-PakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeyThrough-Hole PackagesN-ChannelIRFU3303 IRFU024N IRFU4105 IRFU1205 IRFU110 IRFU120N IRFU3910 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 IRFU320 IRFU420 IRFUC20 30 55 55 55 100 100 100 200 200 250 250 400 400 500 600 0.031 0.075 0.045 0.027 0.54 0.21 0.11 1.5 0.80 2.0 1.1 3.6 1.8 3.0 4.4 33 16 25 37 4.3 9.1 15 2.6 4.8 2.2 3.8 1.7 3.1 2.4 2.0 21 10 19 23 2.7 5.8 9.5 1.7 3.0 1.4 2.4 1.1 2.0 1.5 1.3 2.2 3.3 2.7 1.8 5.0 3.2 2.4 5.0 3.0 5.0 3.0 5.0 3.0 3.0 3.0 57 38 48 69 25 39 52 25 42 25 42 25 42 42 42
90637I-PakH8** Not rated TO-262HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeyThrough-Hole PackagesP-ChannelIRFU5505 IRFU5305 IRFU9014 IRFU9024 IRFU9110 IRFU9120 IRFU9120N IRFU9210 IRFU9220 IRFU9214 IRFU -60 -60 -100 -100 -100 -200 -200 -250 -400 0.11 0.065 0.50 0.28 1.2 0.60 0.48 3.0 1.5 3.0 7.0 -18 -28 -5.1 -8.8 -3.1 -5.6 -6.5 -1.9 -3.6 -2.7 -1.8 -11 -18 -3.2 -5.6 -2.0 -3.6 -4.1 -1.2 -2.3 -1.7 -1.1 2.2 1.4 5.0 3.0 5.0 3.0 3.2 5.0 3.0 2.5 2.5 57 89 25 42 25 42 39 25 42 50 50
91663I-PakH8N-ChannelIRLU2703 IRLU3303 IRLU3103 IRLU024N IRLU2705 IRLU2905 IRLU120N IRLU3410 ** Not rated 30 30 30 55 55 55 100 100Logic Level0.045 0.031 0.019 0.065 0.04 0.027 0.185 0.10 22 33 46 17 24 36 11 15 14 21 29 11 17 23 6.9 9.5 3.3 2.2 1.8 3.3 15 1.8 3.2 2.4 38 57 69 38 46 69 39 52
H8TO-262HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeyThrough-Hole PackagesN-ChannelIRFD014 IRFD024 IRFD110 IRFD120 IRFD210 IRFD220 IRFD214 IRFD224 IRFD310 IRFD320 IRFD420 IRFDC20 60 60 100 100 200 200 250 250 400 400 500 600 0.2 0.1 0.54 0.27 1.5 0.8 2.0 1.1 3.6 1.8 3.0 4.4 1.7 2.5 1.0 1.3 0.6 0.8 0.57 0.76 0.42 0.60 0.46 0.32 1.2 1.8 0.71 0.94 0.38 0.50 0.32 0.43 0.23 0.33 0.26 0.21 120 120 120 120 120 120 120 120 120 120 120 120 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3
HEXDIPH9** Not rated TO-262HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID Qg Total ID V (BR)DSS Continuous Gate Charge R DS(on) RΘ PD Drain-to-Source Continuous Fax (nC) On-State Drain Current Drain Current Max. Thermal Max. Power Case Breakdown on 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C Demand Outline (A) (V) (? ) (°C/W) (W) Number (A) Number KeyThrough-Hole PackagesN-ChannelIRF737LC IRF740LC IRF840LC IRFBC40LC 300 400 500 600TO-220Low Charge0.75 0.55 0.85 1.2 6.1 10 8.0 6.2 ** ** ** ** 1.7 1.0 1.0 1.0 74 125 125 125 3.9 39 39 39
H11** Not rated TO-262HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeyThrough-Hole PackagesN-ChannelIRFZ24N IRFZ34N IRFZ44N IRFZ46N IRFZ48N IRF1010N IRF3205 IRFZ34E IRFZ44E IRF1010E IRF2807 IRF520N IRF530N IRF540N IRF1310N IRF3710 IRF3315 IRF3415 IRFBC20 IRFBC30 IRFBC40 IRFBE20 ** Not rated TO-262 55 55 55 55 55 55 55 60 60 60 75 100 100 100 100 100 150 150 600 600 600 800 0.07 0.04 0.024 0.02 0.016 0.012 0.008 0.042 0.023 0.012 0.013 0.20 0.11 0.052 0.036 0.028 0.082 0.042 4.4 2.2 1.2 6.5 17 26 41 46 53 72 98 28 48 81 71 9.5 15 27 36 46 21 37 2.2 3.6 6.2 1.8 12 18 29 33 37 51 69 20 34 57 50 6.7 11 19 25 33 15 26 1.4 2.3 3.9 1.2 3.3 2.7 1.8 1.7 1.6 1.2 1.0 2.2 1.4 0.90 1.0 9.5 2.4 1.6 1.3 1.0 1.6 1.0 2.5 1.7 1.0 2.3 45 56 83 88 94 130 150 68 110 170 150 47 60 94 120 150 94 150 50 74 125 54TO-220AB
H12HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeyThrough-Hole PackagesIRFBE30 IRFBF30 IRFBG20 IRFBG30 800 900 .0 3.7 11 5.0 4.1 3.6 1.4 3.1 2.6 2.3 0.86 2.0 2.0 1.0 2.3 1.0 125 125 54 125TO-220AB
H12P-ChannelIRF9Z24N IRF9Z34N IRF5305 IRF4905 IRF9530N IRF9540N IRF5210 IRF -55 -55 -100 -100 -100 -150 0.175 0.10 0.06 0.02 0.20 0.117 0.06 0.29 -12 -17 -31 -64 -13 -19 -35 -11 -8.5 -12 -22 -45 -9.2 -13 -25 -7.8 3.3 2.7 1.4 1.0 2.0 1.6 1.0 1.8 45 56 110 150 75 94 150 83
H12** Not rated TO-262HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Voltage Resistance Resistance 1 Dissipation 1 25°C (A) (V) (°C/W) (W) (? ) (A) NumberFax Case on Demand Outline Number KeyThrough-Hole PackagesN-ChannelIRL3302 IRL3202 IRL3102 IRL3402 IRL3502 IRL2703 IRL3303 IRL3103 IRL2203N IRL3803 IRLZ24N IRLZ34N IRLZ44N IRL3705N IRL2505 IRL520N IRL530N IRL540N IRL 20 20 20 30 30 30 30 30 30 55 55 55 55 55 100 100 100 100TO-220ABLogic Level0.020 0.016 0.013 0.01 0.007 0.04 0.026 0.014 0.007 0.007 0.006 0.06 0.035 0.022 0.01 0.008 0.18 0.10 0.044 0.026 39 48 61 85 110 24 34 56 100 61 120 18 27 41 77 104 10 15 30 48 25 30 39 54 67 17 24 40 71 43 83 13 19 29 54 74 7.1 11 21 34 2.2 1.8 1.4 1.1 0.89 3.3 2.7 1.8 1.2 3.2 1.0 3.3 2.7 1.8 1.2 0.75 3.2 2.4 1.6 1.0 57 69 89 110 140 45 56 83 130 150 45 56 83 130 200 47 63 94 150 995
91366 IRLI
91375** Not rated TO-262HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID Qg Total ID V (BR)DSS Continuous Gate Charge R DS(on) RΘ PD Drain-to-Source Continuous Fax (nC) On-State Drain Current Drain Current Max. Thermal Max. Power Case Breakdown on 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C Demand Outline (A) (V) (? ) (°C/W) (W) Number (A) Number KeyThrough-Hole PackagesN-ChannelIRFI740GLC IRFI840GLC IRFIBC40GLC 400 500 600TO-220 FullPak (Fully Isolated)Low Charge0.55 0.85 1.2 6.0 4.8 4.0 ** ** ** 3.1 3.1 3.1 40 40 40 39 39 39
91211 H13** Not rated TO-262HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeyThrough-Hole PackagesN-ChannelIRFIZ24N IRFIZ34N IRFIZ44N IRFIZ46N IRFIZ48N IRFI1010N IRFI3205 IRFIZ24E IRFIZ34E IRFI510G IRFI520N IRFI530N IRFI540N IRFI1310N IRFI3710 IRFI620G IRFI630G IRFI640G IRFI614G IRFI624G IRFI634G IRFI644G ** Not rated TO-262 55 55 55 55 55 55 55 60 60 100 100 100 100 100 100 200 200 200 250 250 250 250 0.07 0.04 0.024 0.02 0.016 0.012 0.008 0.071 0.042 0.54 0.20 0.11 0.052 0.036 0.025 0.8 0.4 0.18 2.0 1.1 0.45 0.28 13 19 28 31 36 44 56 14 21 4.5 7.2 11 18 22 28 4.1 5.9 9.8 2.1 3.4 5.6 7.9 9.2 13 20 22 25 31 40 9.6 15 3.2 5.1 7.8 13 16 20 2.6 3.7 6.2 1.3 2.2 3.5 5 5.8 4.8 0.024 3.8 3.6 3.2 3.1 5.2 4.1 5.5 5.5 4.5 3.6 3.3 3.1 4.1 3.6 3.1 5.5 4.1 3.6 3.1 26 31 38 40 42 47 48 29 37 27 27 33 42 45 48 30 32 40 23 30 32 40TO-220 FullPak (Fully Isolated)
H14HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeyThrough-Hole PackagesIRFI720G IRFI730G IRFI740G IRFI734G IRFI744G IRFI820G IRFI830G IRFI840G IRFIBC20G IRFIBC30G IRFIBC40G IRFIBE20G IRFIBE30G IRFIBF20G IRFIBF30G 400 400 400 450 450 500 500 500 600 600 600 800 800 900 900 1.8 1.0 0.55 1.2 0.63 3.0 1.5 0.85 4.4 2.2 1.2 6.5 3.0 8.0 3.7 2.6 3.7 5.4 3.4 4.9 2.1 3.1 4.6 1.7 2.5 3.5 1.4 2.1 1.2 1.9 1.7 2.3 3.4 2.1 3.1 1.3 2 2.9 1.1 1.6 2.2 .86 1.4 .79 1.2 4.1 3.6 3.1 3.6 3.1 4.1 3.6 3.1 4.1 3.6 3.1 4.1 3.6 4.1 3.6 30 32 40 35 40 30 32 40 30 35 40 30 35 30 35TO-220 FullPak (Fully Isolated)
90856 H14P-ChannelIRFI9Z24N IRFI9Z34N IRFI4905 IRFI9540G IRFI9540N IRFI5210 IRFI9634G ** Not rated TO-262 -55 -55 -55 -100 -100 -100 -250 0.175 0.10 0.02 0.117 0.117 0.06 1.0 -9.5 -14 -41 -13 -13 -20 -4.1 -6.7 -10 -29 -9.2 -9.2 -14 -2.6 5.2 4.1 2.4 3.6 3.6 3.1 3.6 29 37 63 42 42 48 35
91488 H14HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeyThrough-Hole PackagesN-ChannelIRLI2203N IRLI3803 IRLIZ24N IRLIZ34N IRLIZ44N IRLI3705N IRLI2505 IRLI520N IRLI530N IRLI540N IRLI 55 55 55 55 55 100 100 100 100TO-220 FullPak (Fully Isolated)Logic Level0.007 0.006 0.06 0.035 0.022 0.01 0.008 0.18 0.10 0.044 0.026 61 67 14 20 28 47 58 7.7 11 20 27 43 47 9.9 14 20 33 41 5.4 7.8 14 19 3.2 3.1 5.8 4.8 4.0 3.2 2.4 5.5 4.5 3.6 3.1 47 48 26 31 38 47 63 27 33 42 48
91384 H14P-ChannelIRFI9520G IRFI9530G IRFI9620G IRFI9630G IRFI9640G -100 -100 -200 -200 -200Logic Level0.6 0.03 1.5 0.8 0.5 -5.2 -7.7 -3.0 -4.3 -6.1 -3.6 -5.4 -1.9 -2.7 -3.9 4.1 3.6 4.1 3.6 3.1 37 38 30 40 40
90839 H14** Not rated TO-262HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID Qg Total ID V (BR)DSS Continuous Gate Charge R DS(on) RΘ PD Drain-to-Source Continuous Fax (nC) On-State Drain Current Drain Current Max. Thermal Max. Power Case Breakdown on 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C Demand Outline (A) (V) (? ) (°C/W) (W) Number (A) Number KeyThrough-Hole PackagesN-ChannelIRFP350LC IRFP360LC IRFP450LC IRFP460LC IRFPC50LC IRFPC60LC 400 400 500 500 600 600TO-247Low Charge0.30 0.20 0.40 0.27 0.60 0.40 18 23 16 20 13 16 ** ** ** ** ** ** 0.65 0.45 0.65 0.45 0.65 0.45 190 280 190 280 190 280 70 98 70 98 70 98
H16** Not rated TO-262HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeyThrough-Hole PackagesN-ChannelIRFP044N IRFP048N IRFP054N IRFP064N IRFP140N IRFP150N IRFP3710 IRFP240 IRFP250 IRFP260 IRFP244 IRFP254 IRFP264 IRFP340 IRFP350 IRFP360 IRFP344 IRFP354 IRFP440 IRFP448 IRFP450 IRFP460 ** Not rated TO-262 55 55 55 55 100 100 100 200 200 200 250 250 250 400 400 400 450 450 500 500 500 500 0.02 0.016 0.012 0.008 0.052 0.036 0.028 0.18 0.085 0.055 0.28 0.14 0.075 0.55 0.30 0.20 0.63 0.35 0.85 0.60 0.40 0.27 49 62 72 98 27 39 51 20 30 46 15 23 38 11 16 23 9.5 14 8.8 11 14 20 35 44 51 69 19 28 36 12 19 29 9.7 15 24 6.9 10 14 6.0 9.1 5.6 6.6 8.7 13 1.5 1.2 1.2 1.0 1.6 1.1 .83 0.83 0.65 0.45 0.83 0.65 0.45 0.83 0.65 0.45 0.83 0.65 0.83 0.70 0.65 0.45 100 130 130 150 94 140 180 150 190 280 150 190 280 150 190 280 150 190 150 180 190 280
TO-247H17HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeyThrough-Hole PackagesIRFPC30 IRFPC40 IRFPC48 IRFPC50 IRFPC60 IRFPE30 IRFPE40 IRFPE50 IRFPF30 IRFPF40 IRFPF50 IRFPG30 IRFPG40 IRFPG50 600 600 600 600 600 800 800 800 900 900 900 00 2.2 1.2 0.82 0.60 0.40 3.0 2.0 1.2 3.7 2.5 1.6 5.0 3.5 2.0 4.3 6.8 8.9 11 16 4.1 5.4 7.8 3.6 4.7 6.7 3.1 4.3 6.1 2.7 4.3 5.6 7.0 10 2.6 3.4 4.9 2.3 2.9 4.2 2.0 2.7 3.9 1.2 0.83 0.73 0.65 0.45 1.0 0.83 0.65 1.0 0.83 0.65 1.0 0.83 0.65 100 150 170 180 280 125 150 190 125 150 190 125 150 190
TO-247H17P-ChannelIRFP9140 IRFP9140N IRFP -100 -200 0.20 0.117 0.50 -21 -21 -12 -15 -15 -7.5 0.83 1.3 0.83 180 120 150
90481 H17** Not rated TO-262HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeyThrough-Hole PackagesN-ChannelIRFZ24NL IRFZ34NL IRFZ44NL IRFZ46NL IRFZ48NL IRF1010NL IRF3205L IRF1010EL IRF2807L IRF3315L IRFBC20L IRFBC30L IRFBC40L IRFBF20L 55 55 55 55 55 55 55 60 75 150 600 600 600 900 0.07 0.040 0.022 0.020 0.016 0.011 0.008 0.012 0.013 0.082 4.4 2.2 1.2 8.0 17 29 49 53 64 84 110 83 71 21 2.2 3.6 6.2 1.7 12 20 35 37 45 60 80 59 50 15 1.4 2.3 3.9 1.1 3.3 2.2 1.4 1.3 1.1 0.90 0.75 0.90 1.0 1.6 2.5 1.7 1.0 2.3 45 68 110 120 140 170 200 170 150 94 50 74 130 54
9. TO-262H19P-ChannelIRF5305L IRF4905L IRF9520NL IRF9530NL -55 -55 -100 -100 0.06 0.02 0.48 0.20 -31 -74 -6.7 -14 -22 -52 -4.8 -9.9 1.4 0.75 3.2 2.0 110 200 47 75
H19** Not rated TO-262HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberHEXFET? Power MOSFETsID ID V (BR)DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 100° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (? ) (°C/W) (W) Number (A)Fax Case on Demand Outline Number KeyThrough-Hole PackagesN-ChannelIRL3303L IRL3103L IRL2203NL IRL3803L IRLZ24NL IRLZ34NL IRLZ44NL IRL3705NL IRL 30 30 55 55 55 55 55TO-262Logic Level0.026 0.014 0.007 0.006 0.06 0.035 0.022 0.01 0.008 38 64 116 140 18 30 47 89 104 27 45 82 98 13 21 33 63 74 2.2 1.4 0.90 0.75 3.3 2.2 1.4 0.90 0.75 68 110 170 200 45 68 110 170 200
91362 H19** Not rated TO-262HEXDIP Illustrations not to scaleI-PakTO-247 TO-220AB TO-220 FullPakTo view a datasheet, click on the part numberOOOO
常用大功率 P 沟道场效应管的选型
...IR 200 - 5.0 40 TO-3 - IR 150 - 5.0 40 ...P沟道和N沟道MOS场效应管... 4页 免费
N沟道...IR2104 + IRF540 MOS电机驱动全桥_电子/电路_工程科技_专业资料。R2104 + ...首先,本人参考了 《大功率直流马达的驱动――ABU ROBOCON 2005 比赛之动力方案...现在我们焊机上常用的 MOS 管一般为东芝,富士,IR 等厂家生产 什么叫 IGBT IGBT...(双极型三极管)和 MOS 绝缘栅型场效应管组成的复合全控型电压驱动式功率半导体...MOSFET_Device_IRF选型_信息与通信_工程科技_专业资料。MOSFET_Device_IRF选型,...IR公司_大功率MOS管选型 31页 1下载券
NEC MOSFET选型 87页 免费
IRF_MOSFET...MOS管型号型号MAT02FH MPSA06 MPSA10 MPSH10 VN10...65 A 1A 10 A 最大功率 0,5 W 0,625 W 0...IRFR9024 IRFD9120 IRF9140 IRFP9140 IRFD9220 IRF...根据设计要求、驱动要求及电力MOSFET 管开关特性,选择驱动芯片IR2110 来实现 驱动...功率场效应晶体管也分为结型和绝缘栅型,但通常主要指绝缘栅型中的 MOS 型(...MOS IRF420 N-场效应 500V 2.5A 50W TO-3 IRF421 N-场效应 450V 2.5A ...mos防反接参考Irf 2页 1下载券
高压MOS管 10页 免费
IRF系列功率管介绍 ...2.使用 IR2130 替代了 IR2103,电路板更加紧密,且...3 低侧 MOS 管的下侧增加电流检测电阻(大致 100 ...功率(约)= 48V * I 。 图 1 提升电流过程 图...并联 mos 管的两大问题,其一就是 mos 管的选型,其二就是 mos 管参数的筛选...从图中可见此 PMOS 管的字符与常 见的 IR 公司器件有较大差异, 遂使用 DF...IR2104 + IRF540 MOS电机驱动全桥 学习与实践过程_电子/电路_工程科技_专业资料...场效应管电机驱动-MOS管... 4页 1下载券 一种实用的功率MOS管电机... 暂...
All rights reserved Powered by
copyright &copyright 。文档资料库内容来自网络，如有侵犯请联系客服。